News: Microelectronics
20 October 2026
Guerrilla RF expands GaN design support and begins sampling new high-power devices
Guerrilla RF Inc (GRF) of Greensboro, NC, USA — which provides radio-frequency integrated circuits (RFICs) and monolithic microwave integrated circuits (MMICs) for wireless applications — says that new nonlinear simulation models for its GRF0005 and GRF0012 gallium nitride (GaN) power transistors are now available in the Modelithics COMPLETE Library.
Also, the firm is now sampling three new high-power GaN-on-silicon carbide (GaN-on-SiC) devices targeting both commercial and aerospace & defense markets. In particular, the broadband nature of these devices makes them suitable for tactical radio, UAS (drone), and C-UAS (counter drone) applications.
Modelithics provides measurement-based RF and microwave simulation models that engineers use in electronic design automation software to assess component performance before building hardware. The new GRF0005 and GRF0012 models extend design support across Guerrilla RF’s GaN portfolio from 5W to 150W.
“Making these models available through the Modelithics COMPLETE Library is an important step in expanding Guerrilla RF’s GaN platform,” says founder & CEO Ryan Pratt. “It gives customers a more practical way to evaluate performance early in the design process and move toward production with greater confidence,” he adds. “Our growing portfolio of GaN models continues to build on our RF design expertise and expands our ability to serve higher-power applications across military systems and wireless infrastructure, which are among the company’s fastest-growing segments. As these programs advance, we expect revenue derived from our GaN portfolio to ramp through 2027 and beyond, positioning the platform to become a meaningful growth driver for Guerrilla RF.”
The GRF0005 and GRF0012 are 5W and 12W devices, respectively, with both operating from DC to 12GHz. These transistor cores natively support 40V operation and are also compatible with 28V supply rails. Together with the six GaN models announced earlier this year, the two new models broaden customer access to simulation tools that support design-in activity, shorten development cycles, and advance adoption of Guerrilla RF’s high-power GaN portfolio.
Model capabilities
Nonlinear models are designed to show how a transistor performs under the higher-power operating conditions used in RF amplifiers. The models help engineers to assess tradeoffs involving power, efficiency, linearity and thermal performance before committing to hardware.
- Large-signal behavior: evaluates output power, compression, distortion and efficiency.
- Bias and thermal effects: assesses changes in operating conditions, including self-heating.
- Load-pull analysis: helps to identify source and load impedances that support power, efficiency and linearity objectives.
The GRF0005 and GRF0012 models are available now through the Modelithics COMPLETE Library.
Product development update
Guerrilla RF is now sampling three additional discrete GaN-on-SiC high-electron-mobility transistors (HEMTs) for both commercial and aerospace & defense applications:
- GRF0051: 50W P3dB, DC to 6GHz, supporting 28V and 50V operation;
- GRF0110: 110W P3dB, DC to 3.7GHz, supporting 28V and 50V operation;
- GRF0150: 150W P3dB, DC to 3.2GHz, supporting 28V and 50V operation.
The devices are expected to move into full production in the near term. Together, they extend Guerrilla RF’s high-power GaN roadmap for applications like tactical radio, UAS (drone) and C-UAS (counter drone) systems where broadband performance, thermal capability and design flexibility are important.
The expanded model library and continued product sampling are intended to support customer design activity and accelerate commercialization of Guerrilla RF’s high-power GaN portfolio.
Guerrilla RF’s high-power GaN HEMT models now available in Modelithics COMPLETE Library
Guerrilla RF unveils new GaN-on-SiC HEMT power amplifiers dice for high-performance RF
