News: Microelectronics
27 October 2026
SemiQ makes available Gen4 1200V and 750V SiC MOSFETs
SemiQ Inc of Lake Forest, CA, USA — which designs, develops and manufactures custom silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-voltage applications — has announced the availability of its fourth-generation QSiC silicon carbide power devices, launching a family of 1200V and 750V SiC bare dies and MOSFETs.
SemiQ Gen4 technology incorporates an optimized cell topology, featuring a 36% reduction in cell pitch, along with optimized JFET and P-well implantation. These design improvements enable a 23% reduction in specific on-resistance (Ron(sp)) versus previous generations, and have a higher current capability, reduced conduction losses, improved power density and increased overall system efficiency.
The family’s 1200V devices reduce RDS(on) by 21% versus its Gen3 devices (11Ω versus 14Ω). They also offer an enhanced conduction and switching performance to reduce total switching energy by over 11% (1491mJ versus 1677mJ), while maintaining the same 5mm x 5mm die size as its Gen3 1200V devices. This helps to reduce power losses and thermal load while supporting more compact power conversion systems.
Unlike in previous generations, the Gen4 line up features a 750V SiC MOSFET. This offers an even lower RDS(on) of 9mΩ and has a total switching energy that is just 871µJ.
The Gen4 MOSFET dies undergo wafer-level-gate-oxide gate burn-in screening at voltages exceeding 1400V and 800V, respectively. Both are avalanche tested to 800mJ.
Both devices are available in a 4-pin TO-247-4L MOSFET package and as a bare die. SemiQ is targeting the devices at high-power applications, including electric vehicle (EV) charging infrastructure, high-voltage DC/DC and DC/AC converters, solar inverters, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), induction heating, welding, and motor drives.
“Our Gen4 SiC MOSFETs are designed to improve efficiency and thermal efficiency across a wide range of operating conditions and these devices help customers improve power density and efficiency,” says president Dr Timothy Han. “This enables the development of more compact systems with reduced losses for applications such as EV charging, renewable energy, and industrial drives.”
The new lineup is on display at electronica 2026 in Munich, Germany (10–13 November), where demos are being given at Alfatec’s booth #A6.620.
SemiQ launches QSiC Dual3 family of 1200V half-bridge MOSFET modules
