News: Microelectronics
29 September 2026
Navitas awarded ALATTIS US Army project to develop 10kV power semiconductors
Gallium nitride (GaN) and silicon carbide (SiC) power semiconductor firm Navitas Semiconductor Corp of Torrance, CA, USA has been awarded the ALATTIS (Accelerated, Large-Area, 10kV SiC IGBT) program to develop next-generation 10kV silicon carbide (SiC) power semiconductor technology.
Navitas says that, following a competitive evaluation, the US Army selected it from among leading US silicon carbide technology companies in recognition of its UHV SiC innovation, proven ability to deliver defense-grade performance and reliability, and resilient US-anchored manufacturing ecosystem for advanced power semiconductor technologies.
Sponsored by the Army Research Laboratory (ARL) — which operates under the US Army Combat Capabilities Development Command (DEVCOM) — the ALATTIS prototype program aims to develop, execute and validate a novel and currently unavailable domestic manufacturing process for ultra-high-voltage (≥10kV) SiC insulated-gate bipolar transistor (IGBT) power semiconductor devices through iterative design, fabrication and testing. ALATTIS is supported by the Joint Experimentation and Technology Accelerator (JETX) with the aim of advancing high-power electronics for critical defense and infrastructure applications. The program will accelerate the development of next-generation 10kV SiC IGBTs and associated PiN diode technologies for mission-critical systems used by the Armed Forces.
Led by its flagship trench-assisted planar (TAP) MOSFET architecture, Navitas’ GeneSiC silicon carbide power semiconductor portfolio spans voltage ratings from 650V to 6.5kV and is engineered, manufactured and supported by a resilient US-anchored supply chain, enabling secure domestic production of advanced power semiconductor technologies for next-generation defense and critical infrastructure applications. Navitas says that it has pioneered multiple industry firsts in UHV SiC, including:
- 6.5kV SiC thyristors in 2010 (recognized with a 2010 R&D 100 Award);
- 10–15kV PiN diodes in 2012;
- 6.5kV SiC MOSFETs commercial release in 2021.
“The ALATTIS award marks a significant milestone in advancing ultra-high-voltage silicon carbide (SiC) power devices and recognizes Navitas’ over 20 years of innovation in delivering reliable, ultra-high-voltage, high-power SiC technologies,” says Siddarth Sundaresan, senior VP & chief technology officer at Navitas. “This program enables Navitas to extend its leadership beyond SiC MOSFETs by developing next-generation 10kV SiC IGBTs built on our unique, patented trench-assisted planar (TAP) architecture and integrated with advanced PiN diode technologies.”
Navitas unveils fifth-generation SiC Trench-Assisted Planar MOSFET technology
Navitas sampling 3300V and 2300V UHV silicon carbide product portfolio
