News: Microelectronics
25 September 2026
Toshiba launches 3300V SiC MOSFET module
Toshiba Electronic Devices & Storage Corp (TDSC) of Kawasaki, Japan has launched the IX800FXF2YMS4, a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain–source voltage rating of 3300V and a drain current (DC) rating of 800A. Its specifications state an I2t limit value in the diode section (an indicator of surge current capability).
Picture: Toshiba’s IX800FXF2YMS4, a 3300V, 800A dual SiC MOSFET module with 300kA2s I2t capability for industrial equipment.
Manufacturers of industrial equipment, including railway traction inverters and converters, renewable energy power generation systems, and industrial motor control equipment, must constantly meet increasing demands for higher efficiency, smaller size and improved reliability. In these systems, large surge currents that can flow through power semiconductor modules in abnormal conditions must be countered by a sufficient surge current capability.
The IX800FXF2YMS4 has an optimized SiC chip design and delivers an I2t characteristic of 300kA2s (at Tch(initial)=175°C, VGS=-6V, half sine-wave 10ms 1pulse, F.R.=1%), an indicator of the diode section’s surge current capability under abnormal conditions.
The module has a low drain–source on-voltage (sense) (VDS(on)sense) of 1.4V (typical, at ID=800A, VGS=+20V, Tch=25°C), which helps to reduce conduction losses. Its low turn-on switching loss (Eon) of 185mJ and turn-off switching loss (Eoff) of 175mJ (typical, at VDD=1800V, ID=800A, VGS=+20V/–6V, Cgs=100nF, RG(on)=1.2Ω, RG(off)=1.2Ω, Tch=175°C, LS≈70nH) help to reduce switching losses. These characteristics contribute to improved equipment reliability and efficiency, and to smaller cooling systems.
The new product adopts the intelligent fleXible Package Low Voltage (iXPLV), which offers excellent mounting compatibility. It uses silver sintering bonding technology to improve the heat resistance and reliability of bonded sections with SiC chips, achieving the 175°C channel temperature rating required for industrial equipment.
The new addition to Toshiba’s lineup brings the number of SiC MOSFET modules in the iXPLV package to four, broadening the range of available product options.
Toshiba says that it will continue to expand its lineup of SiC MOSFET modules for industrial equipment and provide a wider range of product options that meet diverse equipment specifications and applications, contributing to more reliable, efficient and compact industrial equipment.
