AES Semigas


10 December 2020

DENSO adopts SDK’s 150mm SiC epiwafers

Tokyo-based Showa Denko K.K. (SDK, which produces petrochemicals, gas products, specialty chemicals, electronics, inorganics, aluminium, etc) says that its 6-inch (150mm)-diameter silicon carbide (SiC) epitaxial wafers have been adopted by automotive supplier DENSO Corp of Kariya, Aichi prefecture, Japan for their latest booster power modules for fuel-cell electric vehicles (FCEVs).

Launched in 2009, SDK’s SiC epiwafers have been adopted by electronic device manufacturers for various devices including power supplies for servers of cloud computing systems, quick-charging stands for EVs, and railcars. SDK says that DENSO has adopted its SiC epiwafers for their next-generation power modules after recognizing the track record of adoption by device manufacturers, high-grade epi specifications, low density of surface defects, and low frequency of basal plane dislocations.

Compared with existing mainstream silicon-based semiconductors, SiC-based power semiconductors can operate under high-temperature, high-voltage and high-current conditions, while substantially reducing energy loss, notes SDK, enabling device makers to produce smaller, lighter, more energy-efficient power control modules. SiC power semiconductors are already used in on-board battery chargers (OBCs) and quick-charging stands for EVs, and railcars. Demand is expected to grow with full-scale use in power control units (PCUs) for EVs from 2025, when the SiC epiwafer market is hence expected to be about 100bn yen.

See related items:

SDK splitting off optical semiconductor business

SDK plans third expansion of high-grade SiC epi production in two years

Tags: SDK SiC epitaxy





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