AES Semigas


20 February 2020

Teledyne e2v HiRel and GaN Systems unveil high-reliability 100V GaN power HEMT

Teledyne e2v HiRel of Milpitas, CA, USA (part of the Teledyne Defense Electronics Group that provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) is launching a ruggedized 100V/90A gallium nitride power high-electron-mobility transistor (HEMT) based on technology from GaN Systems Inc of Ottawa, Ontario, Canada (a fabless developer of gallium nitride-based power switching semiconductors for power conversion and control applications).

The new TDG100E90 GaN power HEMT is now available with a bottom-side-cooled package for all applications requiring extremely high reliability, in particular space and military. It joins the 650V, 60A TDG650E60 (launched last December) and is available to provide a lower step-down voltage in high-reliability power circuitry.

Picture: Teledyne e2v HiRel’s new TDG100E90 100V GaN power HEMT.

Gallium nitride devices have revolutionized power conversion in other industries and are now available in radiation-tolerant, plastic-encapsulated packaging that has undergone stringent reliability and electrical testing to ensure mission-critical success. The release of the TDG100E90 GaN HEMT delivers the efficiency, size and power-density benefits required in demanding HiRel power applications.

Teledyne e2v HiRel says that, for all product lines, it performs the most demanding qualification and testing tailored to the highest-reliability applications. This regimen includes sulfuric test, high-altitude simulation, dynamic burn-in, step stress up to 175°C ambient, testing at 9V gate voltage, and full temperature testing.

This new addition to Teledyne’s GaN power HEMT family has an extremely small form factor and leverages GaN Systems’ patented Island Technology, which is a scalable, vertical charge dissipating system that gives the power transistor ultra-low thermal losses, high power density, no-charge storage, and very high switching speeds.

Compared with silicon MOSFET devices, the GaN-based TDG100E90 HEMT significantly reduces losses and electro-magnetic interference (EMI), due to no reverse recovery characteristics. To reduce drain-source on-resistance (RDS(on)) or increase the load current, the TDG100E90 can easily support parallel driving configuration. The use of high-perf

ormance GaNPX packaging allows very high-frequency switching, extremely low inductance, and excellent thermal characteristics, enabling customers to significantly reduce the size and weight of power electronics, claims GaN Systems.

“Teledyne e2v HiRel is pleased to be working with GaN Systems on solutions for the most demanding requirements in key applications for avionics, radar, satcom, space and more,” comments Mont Taylor, Teledyne e2v HiRel’s VP of business development. “In addition to the currently released TDG650E60 650V GaN HEMT, the TDG100E90 complements our portfolio with a lower-voltage, higher-current option, providing GaN flexibility and choices to the HiRel power design community.”

Qualified TDG100E90 devices with bottom-side cooling are now shipping and available for immediate purchase.

See related items:

Teledyne e2v and GaN Systems unveil high-reliability 650V GaN power HEMT

e2v to supply GaN Systems' 100V and 650V hi-rel GaN transistors to global aerospace & defense industry

Tags: GaN Systems E-mode GaN FETs Power electronics



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