AES Semigas


31 January 2020

AKHAN issued US patent for fabricating monolithically integrated diamond semiconductors

AKHAN Semiconductor Inc of Gurnee, IL, USA – which was founded in 2013 and specializes in the fabrication and application of lab-grown, electronics-grade diamond as functional semiconductors – has been issued a patent by the United States Patent Office (USPTO) covering its new and improved system and method for fabricating monolithically integrated diamond semiconductors.

US patent no. 10,546,749 B2 is a key addition to AKHAN’s Miraj Diamond intellectual property portfolio. It is the firm’s seventh patent issued in the USA and is generally related to semiconductor fabrication methods, and more particularly to a method of fabricating diamond semiconductors.

Diamond possess favorable theoretical semiconductor performance characteristics, but practical diamond-based semiconductor device applications remain limited because of difficulties associated with fabricating quality n-type layers in diamond. AKHAN says that its latest patent covers the steps of seeding the surface of a substrate material, forming a diamond layer on the surface of the substrate material, and forming a semiconductor layer within the diamond layer, wherein the diamond semiconductor of the layer has n-type donor atoms and a diamond lattice.

“Through this new and improved system, we are able to more efficiently develop lab-grown diamond technology that performs exceptionally better than the market-leading materials commonly used today,” claims founder & CEO Adam Khan.

See related items:

AKHAN awarded US and Japan patents for n-type diamond

AKHAN issued Korean patent for fabrication of diamond semiconductor materials

AKHAN’s Miraj diamond technology awarded Taiwan patent and US trademark

AKHAN issued Japan patent covering fabrication of diamond semiconductor materials

AKHAN issued with patent covering fabrication of diamond semiconductor materials

Tags: Diamond


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