AES Semigas


11 March 2020

ON Semiconductor launches 900V and 1200V SiC MOSFETs for demanding applications

ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has expanded its range of wide bandgap (WBG) devices with the introduction of two additional families of silicon carbide (SiC) MOSFETs for demanding high-growth applications including solar power inverters, on-board charging for electric vehicles (EV), uninterruptible power supplies (UPS), server power supplies and EV charging stations.

ON Semiconductor says that the new 1200V and 900V N-channel SiC MOSFETs deliver faster switching performance and enhanced reliability compared with silicon. A fast intrinsic diode with low reverse recovery charge delivers a significant reduction in power losses, boosts operating frequencies, and increases the power density of the overall solution.

High-frequency operation is further enhanced by the small chip size, which leads to a lower device capacitance and reduced gate charge Qg (as low as 220nC), reducing switching losses when operating at high frequencies. These enhancements improve efficiency, reduce EMI compared with Si-based MOSFETs, and allow for the use of fewer (and smaller) passive components. The robust SiC MOSFETs offer higher surge ratings, improved avalanche capability and improved short-circuit robustness compared with silicon devices, delivering the higher reliability and longer lifetimes that are essential in demanding modern power applications. A lower forward voltage provides threshold-free on-state characteristics that reduce the static losses that occur when the device is conducting.

1200V devices are rated at up to 103A (ID maximum), while 900V devices carry ratings as high as 118A. For applications requiring higher currents, ON Semiconductor’s MOSFETs can be operated in parallel due to their positive temperature coefficient/temperature independence.

“If design engineers are to meet the challenging efficiency and power density goals that modern renewable energy, automotive, IT and telecom applications demand, then they require high-performance, high-reliability MOSFET devices,” says Gary Straker, VP/general manager, Power MOSFET Division, in ON Semiconductor’s Power Solutions Group. “ON Semiconductor’s WBG SiC MOSFETs extend performance beyond what was possible with silicon devices, delivering lower losses, higher operating temperatures, faster switching, improved EMI and better reliability,” he adds. “Further supporting the engineering community, ON Semiconductor provides a wide range of resources and tools that simplify and speed up the design process.”

All of ON Semiconductor’s SiC MOSFETs are Pb-free and halide-free, and the devices intended for automotive applications are AEC-Q100 qualified and PPAP capable. All devices are offered in industry standard TO-247 or D2PAK packages.

See related items:

ON Semiconductor launches industrial- and automotive-qualified SiC MOSFETs

Tags: SiC power MOSFET



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