AES Semigas


29 October 2020

Microchip launches automotive-qualified 700 and 1200V SiC Schottkys

Microchip Technology Inc of Chandler, AZ, USA has announced its newly qualified 700V and 1200V silicon carbide (SiC) Schottky barrier diode (SBD) power devices, providing electric vehicle (EV) system designers with solutions that meet stringent automotive quality standards across a wide range of voltage, current and package options. As vehicle electrification continues rapid growth worldwide, innovative power technologies such as silicon carbide are required for high-voltage automotive systems ranging from motors to on-board chargers (OBCs) and DC/DC converters.

Microchip says that, for EV power designers who need to increase system efficiency while maintaining high quality, its AEC-Q101-qualified devices maximize system reliability and ruggedness and enable stable and lasting application life. The devices’ superior avalanche performance allows designers to reduce the need for external protection circuits, reducing system cost and complexity, adds the firm.

“As a long-time supplier to the automotive industry, Microchip’s continued expansion of automotive-capable power solutions is leading the transformation of power systems in vehicle electrification,” says Leon Gross, VP of Microchip’s discrete product business unit. “Our focus is to provide automotive solutions that help our clients easily transition to SiC while minimizing the risk of quality, supply and support challenges.”

Microchip has been a supplier to the automotive industry for more than 25 years. Its SiC technology, as well as its multiple IATF 16949:2016-certified fabrication facilities, provide high-quality devices through flexible manufacturing alternatives, helping to minimize risk in the supply chain, says the firm.

Through Microchip’s internal and third-party testing, the firm’s devices have demonstrated no degradation in performance (unlike other SiC devices that degrade under extreme conditions), increasing the application life. Microchip’s SiC SBD ruggedness testing demonstrates 20% higher energy withstand in unclamped inductive switching (UIS) and among the lowest leakage currents at elevated temperatures, it is claimed, increasing system life and enabling more reliable operation.

Microchip’s SiC automotive power devices complement its broad portfolio of controllers, analog and connectivity solutions, providing designers with total system solutions for electric vehicles and charging stations. The firm also provides a broad portfolio of 700, 1200 and 1700V SiC SBD and metal-oxide-semiconductor field-effect transistor (MOSFET) power modules utilizing its newest generation of SiC die. In addition, its dsPIC digital signal controllers deliver performance, low power consumption and flexible peripherals.

Microchip’s AgileSwitch family of digital programmable gate drivers further accelerates the process of moving from the design stage to production. These solutions also have applications across renewable, grid, industrial, transportation, medical, data-center and aerospace and defense systems.

Microchip’s AEC-Q101-qualified SiC SBD devices are supported with SPICE and PLECS simulation models and MPLAB Mindi Analog Simulator. Also available is a PLECS reference design model that uses the firm’s SBDs (1200V, 50A) as part of the power stage — the Vienna 3-phase power factor correction (PFC) reference design.

Microchip’s AEC-Q101-qualified 700 and 1200V SiC SBD devices (also available as die for power modules) for automotive applications are available now for volume production orders.

See related items:

Microchip expands SiC family of 700, 1200 and 1700V SBD-based power modules

Microchip announces production release of 700V MOSFETs and 700V and 1200V Schottky barrier diodes

Tags: Microsemi




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