AES Semigas


13 April 2021

ST launches MasterGaN4 for high-efficiency power conversion up to 200W

STMicroelectronics of Geneva, Switzerland has added to its MasterGaN family of devices by launching MasterGaN4 power packages, which integrate two symmetrical 650V gallium nitride (GaN) power transistors with on-resistance (RDS(on)) of 225mΩ alongside optimized gate drivers and circuit protection to simplify the design of high-efficiency power-conversion applications up to 200W.

MasterGaN4 is said to simplify design using wide-bandgap GaN power semiconductors by taking away the complex gate-control and circuit-layout challenges. With inputs tolerant of voltages from 3.3V to 15V, MasterGaN4 can be controlled by connecting the packages directly to Hall-effect sensors or a CMOS device such as a microcontroller, digital signal processor (DSP) or field-programmable gate array (FPGA).

Leveraging the higher operating frequencies enabled by the switching performance of GaN transistors, as well as their increased efficiency that reduces thermal dissipation, designers can choose small magnetic components and heatsinks to build more compact and lightweight power supplies, chargers and adapters, says ST. MasterGaN4 is suited to use in symmetrical half-bridge topologies as well as soft-switching topologies such as active clamp flyback and active clamp forward, adds the firm.

The wide supply-voltage range, from 4.75V to 9.5V, allows convenient connection to an existing power rail. Built-in protection further simplifies design, including gate-driver interlocks, low-side and high-side under-voltage lockout (UVLO), and over-temperature protection. There is also a dedicated shutdown pin.

As part of the launch, ST is also introducing a dedicated prototype board (EVALMASTERGAN4) that provides a complete set of features to drive MasterGaN4 with a single or complementary driving signal. An adjustable deadtime generator is also provided. The board gives users the flexibility to apply a separate input signal or PWM signal, insert an external bootstrap diode, separate the logic and gate-driver supply rails, and to use a low-side shunt resistor for peak-current-mode topologies.

MasterGaN4 is in production now, in a 9mm x 9mm x 1mm GQFN package that has more than 2mm creepage distance for safe use in high-voltage applications. Pricing starts at $5.99 for orders of 1000 pieces. The EVALMASTERGAN4 board is $87.

See related items:

ST extends MasterGaN family

ST launches first silicon-based driver and GaN transistors integrated in one package

ST and TSMC collaborate to accelerate market adoption of GaN-based products

Tags: STMicroelectronics