AES Semigas


7 January 2021

Teledyne e2v HiRel adds high-power GaN HEMTs to 650V family

Teledyne e2v HiRel of Milpitas, CA, USA (part of the Teledyne Defense Electronics Group that provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) is adding two new, ruggedized gallium nitride (GaN) power high-electron-mobility transistors (HEMTs) to its 650V high-power family of products based on GaN Systems’ technology.

The TDG650E30B and TDG650E15B deliver lower-current performance of 30A and 15A respectively, while the original TDG650E60 650V (introduced a year ago) delivers 60A.

The 650V GaN HEMTs are claimed to be the highest-voltage GaN power devices on the market for demanding high-reliability military, avionics and space applications, providing a suitable fit for applications such as power supply, motor control, and half-bridge topologies.

The new devices come with a bottom-side-cooled configuration and feature ultra-low figure-of-merit (FOM) Island Technology die, low-inductance GaNPX packaging, very high-frequency switching of >100MHz, fast and controllable fall and rise times, and reverse current capability.

“We are pleased to continue the build-out of our 650V family of high-power GaN HEMTs for applications requiring the highest reliability such as space,” says Mont Taylor, VP of business development. “We believe the smaller-sized packaging of these new devices will really benefit customers designing for the highest-power-density projects.”

The TDG650E15B and TDG650E30B are both enhancement-mode GaN-on-silicon power transistors that allow for high current, high voltage breakdown and high switching frequency while offering very low junction-to-case thermal resistance for high-power applications.

Gallium nitride devices have revolutionized power conversion in other industries and are now available in radiation-tolerant, plastic-encapsulated packaging that has undergone the stringent reliability and electrical testing to ensure mission-critical success, says Teledyne e2v HiRel. The release of the new GaN HEMTs delivers the efficiency, size and power-density benefits required in critical aerospace and defense power applications, it adds.

Teledyne e2v HiRel says that, for all product lines, it performs the most demanding qualification and testing tailored to the highest-reliability applications. For power devices, this regime includes sulfuric test, high-altitude simulation, dynamic burn-in, step stress up to 175°C ambient, 9V gate voltage, and full temperature testing. Unlike silicon carbide (SiC) devices, the two new devices can easily be implemented in parallel to increase the load current or lower the effective drain-source on-resistance (RDSon).

Both of the new devices are now available for ordering and immediate purchase.

See related items:

Teledyne e2v and GaN Systems unveil high-reliability 650V GaN power HEMT

Tags: E-mode GaN FETs