AES Semigas


21 June 2021

II-VI introduces heated ion implantation foundry for 150mm SiC wafers

Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA – which manufactures silicon carbide (SiC) substrates and also provides foundry ion implantation services and support to the microelectronics industry – has introduced heated ion implantation foundry services for 150mm SiC wafers.

The growing interest in clean energy is accelerating the electrification of the global energy and transport infrastructure and driving the demand for power electronics with high reliability that can be produced at scale, notes II-VI. The firm is therefore now offering ion implantation foundry services and support for 150mm-diameter SiC wafers. II-VI says that its ion implantation process enables highly reliable power electronics by running at temperatures of up to 650⁰C to anneal the crystal structure dynamically and eliminate defects. The process provides a very high level of doping precision, both in terms of depth and concentration, the firm adds.

“To our knowledge, II-VI is the first foundry in the world to provide such advanced ion implantation services commercially for 150mm SiC wafers and we plan to scale to 200mm in the future,” says Sohail Khan, executive VP, New Ventures & Wide-Bandgap Electronics Technologies business unit. “II-VI’s new ion implantation process is extremely versatile: It delivers a broad energy range from 10keV to 1MeV and can be heated or unheated for a wide range of compound semiconductor wafer materials and devices,” he adds. “This process is compatible with a vast array of materials, including silicon and diamond for special-purpose applications, as well as those that can be integrated into wafer-scale optics platforms.”

II-VI says that it implants tens of thousands of wafers per week and adds tools and capacity as required to support customers’ changing needs, provides capacity for urgent spikes in demand, and offers same-day turnaround. It adds that its technical expertise, quality program and broad range of tooling offer a flexible outsourcing option for ion implantation, serving production manufacturing and R&D environments.

II-VI maintains a large complement of high- and medium-current and high-energy production implanters handling 2-inch to 12-inch substrates. The firm’s range of wafer foundry services includes silicon carbide, gallium arsenide, and indium phosphide epitaxial growth. It also provides ion implantation disk refurbishing and reconditioning services to maximize quality, uptime and utilization.

See related items:

II-VI acquiring Ascatron and INNOViON to form vertically integrated SiC power electronics platform

II-VI licenses GE’s SiC power electronics technology

Ascatron secures €3.5m funding for 3DSiC product development

Tags: II-VI Inc SiC substrates



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