AES Semigas


2 November 2021

SemiQ launches second-generation silicon carbide power switch

SemiQ of Lake Forest, CA, USA – which designs, develops and manufactures SiC components and 150mm SiC epiwafers for high-frequency, high-temperature and high-efficiency power semiconductor devices – has launched its second-generation silicon carbide (SiC) power switch, a 1200V 80mΩ SiC MOSFET, expanding its portfolio of SiC power devices. The MOSFET complements the firm’s existing SiC rectifiers at 650V, 1200V and 1700V.

SemiQ says that it has engineered the MOSFET to provide the best trade-off of conduction and switching losses to benefit the widest possible range of applications.

As shown in the accompanying graph, the new device maintains its efficiency advantage over a full range of frequencies versus popular competing products, giving designers more flexibility over a wider range of applications than other devices on the market, claims SemiQ.

SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles (EVs), power supplies and data centers and are specifically designed and tested to operate reliably in extreme environments. Compared to legacy silicon insulated-gate bipolar transistors (IGBTs), SemiQ’s MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight and cooling requirements.

SemiQ’s new 1200V 80mΩ SiC MOSFET is available in a TO-247-3L package and will soon be available in a TO-247-4L package and a series of modules. Samples are in stock at SemiQ and are available through distributors DigiKey, Mouser and Richardson Electronics.

See related items:

SemiQ launches 650V, 1200V and 1700V SiC Schottky diode family

Tags: SiC power MOSFET


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