AES Semigas


29 August 2022

Tagore launches dual-channel ultra-low-noise amplifier with integrated RF switch

Fabless semiconductor company Tagore Technology Inc – which was founded in January 2011 and has design centers in Arlington Heights, IL, USA and Kolkata, India developing gallium nitride-on-silicon (GaN-on-Si) technology for RF and power management applications – has launched the TSL8329M, a dual-channel low-noise amplifier (LNA) with an integrated RF switch. Designed for demanding applications, the multi-chip module operates from 3.3GHz to 4.2GHz. Architected with cascading, two-stage LNA and a high-power GaN-based fail-safe RF switch, the TSL8329M is suited to applications in 5G infrastructure and TDD mMIMO (massive multiple-input-multiple-output) systems.

“With integrated dual-channel RF front end, the high performance TSL8329M is well suited for the most demanding 5G infrastructure radios, small cells and massive MIMO system,” says chief marketing officer Klaus Buehring. “The footprint and pinouts allow easy adaption in complex MIMO configurations.”

The TSL8329M has an NF of 1dB with 32dB of gain at 3.6GHz with an output third-order intercept point (OIP3) of 35dBm. In bypass mode, the LNA provides 13dB of gain. In power-down mode, the device draws 5mA. In transmit operation, when RF inputs are connected to a termination pin (TERM-CHA or TERM-CHB), the switch provides a low insertion loss of 0.45dB at 3.6GHz and handles LTE average power (9dB peak-to-average ratio (PAR)) of 43dBm for full lifetime operation. The device comes in a RoHS-compliant, compact, 6mm x 6mm, 40-lead LFCSP.

See related items:

Tagore launches GaAs pHEMT ultra-low-noise amplifiers and linear PA driver

Tagore launches 10-100W second-generation RF switches

Tags: GaN on silicon


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