AES Semigas


18 January 2022

EPC Space provides demo boards for evaluating rad-hard GaN power devices

EPC Space LLC of Haverhill, MA, USA has announced the availability of a family of demonstration boards to help designers quickly and easily implement radiation-hardened (RH) gallium nitride (GaN) power devices into their high-reliability and aerospace applications.

The new family of demonstration boards offers fast prototyping and evaluation of the features and capabilities of EPC Space’s rad-hard eGaN power devices. The offering includes the following: (1) a trio of low-side driver demo boards (EPC7C001, EPC7C002, EPC7C003), which utilize EPC Space’s eGaN gate driver modules to drive a corresponding 40V, 100V or 200V discrete eGaN FET; (2) the EPC7C005 demo board, which allows evaluation of the switching operation and conversion efficiency performance of the FBS-GAM02-P-C50 rad-hard power module connected as a half-bridge point-of-load (POL) output stage; and (3) the EPC7C006 demo board, which is a three-phase motor demonstration board that utilizes the FBS-GAM02-P-R50 module.

“Radiation-hardened eGaN FETs and ICs offer designers improved performance, lower cost and shorter delivery times compared to RH silicon-based devices,” says CEO Bel Lazar. “We are happy to provide an easy-to-use evaluation platform to assist designers looking to convert their RH silicon designs to take advantage of the higher power densities, higher efficiencies, and better cost and delivery that GaN offers.”

Five-unit pricing starts at $850/each with lead times of six-weeks.

See related items:

EPC Space launches cost-effective 60V rad-hard GaN power device

EPC Space launches rad-hard eGaN power transistor die on ceramic adaptors

EPC Space launches rad-hard eGaN drivers and power stages

Tags: EPC


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