14 June 2022
EPC launches 3.9mΩ 100V rad-hard GaN transistor for space applications
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the EPC7018, a 100V, 3.9mΩ, 345APulsed, radiation-hardened enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET) in a small 13.9mm2 footprint. The EPC7018 has a total dose rating greater than 1Mrad and SEE (single event effect) immunity for LET (linear energy transfer) of 85MeV/(mg/cm2). Along with the rest of the rad-hard family (EPC7014, EPC7007, EPC7019), the EPC7018 is offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space LLC of Haverhill, MA, USA.
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity and very low on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies, resulting in higher power densities, higher efficiencies, and more compact and lighter-weight circuitry for critical space-borne missions, says EPC. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions, it adds.
Applications benefiting from the performance and fast deployment of the EPC7018 include DC-DC power, motor drives, light detection & ranging (LiDAR), deep probes and ion thrusters for space applications, satellites and avionics.
“The EPC7018 offers designers a high-power, ultra-low on-resistance device enabling a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before,” says CEO & co-founder Alex Lidow.
The EPC7018 is available for engineering sampling and will be fully qualified for volume shipments in December.