AES Semigas


22 March 2022

Microchip unveils 3.3kV silicon carbide MOSFETs and Schottky barrier diodes

Microchip Technology Inc of Chandler, AZ, USA has expanded its silicon carbide (SiC) portfolio with the release of what is claimed to be the lowest on-resistance (RDS(on)) 3.3kV SiC MOSFETs and highest current-rated SiC Schottky barrier diodes (SBDs) available in the market, enabling system designers of traction power units (TPUs), auxiliary power units (APUs), solid-state transformers (SSTs), industrial motor drives and energy infrastructure solutions to take advantage of ruggedness, reliability and performance. With the expansion of its SiC portfolio, Microchip says that designers are equipped with the tools to develop smaller, lighter and more efficient solutions for electrified transportation, renewable energy, aerospace and industrial applications.

Many silicon-based designs have reached their limits in efficiency improvements, system cost reduction and application innovation, says the firm. While high-voltage SiC provides a proven alternative to achieve these results, until now the availability of 3.3kV SiC power devices was limited. Microchip’s 3.3kV MOSFETs and SBDs join the firm’s portfolio of SiC solutions that include 700V, 1200V and 1700V die, discretes, modules and digital gate drivers.

The 3.3kV SiC power devices include MOSFETs with what is reckoned to be the industry’s lowest RDS(on) of 25mOhm and SBDs with the industry’s highest current rating of 90A. Both MOSFETs and SBDs are available in die or package form. These new levels of performance enable designers to simplify their design, create higher-power systems and use fewer paralleled components for smaller, lighter and more efficient power solutions, the firm says.

“We focus on developments that provide our customers the ability to quickly innovate systems and move their end products into a competitive advantage position faster,” says Leon Gross, VP of Microchip’s discrete product business unit. “Our new family of 3.3kV SiC power products allows customers to move to high-voltage SiC with ease, speed and confidence and benefit from the many advantages of this exciting technology over silicon-based designs,” he adds.

Development tools

The expanded SiC portfolio is supported by a range of SiC SPICE models compatible with Microchip’s MPLAB Mindi analog simulator modules and driver board reference designs. The Intelligent Configuration Tool (ICT) enables designers to model efficient SiC gate driver settings for Microchip’s AgileSwitch family of configurable digital gate drivers.
These 3.3kV SiC die and discrete devices in a variety of package options are available for order in production quantities.

See related items:

Microchip launches automotive-qualified 700 and 1200V SiC Schottkys

Microchip expands SiC family of 700, 1200 and 1700V SBD-based power modules

Tags: Microsemi


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