AES Semigas


11 March 2022

Soitec expanding SmartSiC wafer manufacturing for EVs and industrial markets

Engineered substrate manufacturer Soitec has announced a new fabrication facility at its headquarters in Bernin, near Grenoble, France, primarily to manufacture new silicon carbide (SiC) wafers targeted at the electric vehicle (EV) and industrial markets. The extension will also support Soitec’s 300mm silicon-on-insulator (SOI) activities.

The fab is to produce SmartSiC engineered wafers developed by Soitec at the Substrate Innovation Center at CEA-Leti in Grenoble, using Soitec’s proprietary SmartCut technology.

Soitec notes that silicon carbide wafers adds value for industrial applications and EVs by increasing their driving range, shortening the charging time and diminishing their cost. With its SmartSiC products, Soitec is engaged with major SiC device makers and aims to generate first revenues in second-half 2023.

“By 2030, around 40% of all new cars will be electric,” expects CEO Paul Boudre. “Our unique, highly performant, sustainable and cost-competitive SmartSiC solution addresses the industrial challenges, helps to optimize energy efficiency, and will accelerate the adoption of electric vehicles,” he adds. “This investment is a major milestone for us, as SmartSiC is set to be another growth engine for Soitec and a driver of the transformation of the automotive and industrial markets.”

See related items:

A*STAR’s IME and Soitec to co-develop silicon carbide for EVs and high-voltage electronics

Soitec and Mersen partner to develop poly-SiC substrates for EV market

Soitec acquires NOVASiC to aid industrialization of SmartSiC for automotive and industrial markets

Soitec creates VP role for Silicon Carbide Program

Soitec and Applied Materials to jointly develop silicon carbide substrates using Smart Cut technology

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