AES Semigas


7 March 2022

Teledyne e2v HiRel unveils space-screened versions of 650V, 60A GaN HEMTs

Teledyne e2v HiRel Electronics of Milpitas, CA, USA (part of the Teledyne Defense Electronics Group that provides solutions, sub-systems and components to the space, transportation, defense and industrial markets) has added new space-screened versions of its 650V, 60A high-reliability gallium nitride (GaN) high-electron-mobility transistors (GaN HEMTs). The new parts go through NASA Level 1 screening flow and can be brought up to full Level 1 conformance with extra qualification testing, if desired. Typical applications include battery management, DC-DC converters, and space motor drives.

Two new parts are available, both space-grade, 650V enhancement-mode, top-side-cooled GaN-on-silicon power transistors. The properties of GaN allow for high current, high voltage breakdown and high switching frequency, enabling high-efficiency and high-power-density designs. The two models are:

  • TDG650E601TSP space GaN E-mode transistor with 900V transient drain-to-source maximum voltage;
  • TDG650E602TSP space GaN E-mode transistor with 750V transient drain-to-source maximum voltage.

Each is available with options for EAR99 or European sourcing.

Teledyne e2v HiRel’s GaN HEMTs feature single-wafer lot traceability, extended temperature performance from -55°C to +125°C, and low-inductance, low-thermal-resistance packaging.

“Our GaN HEMT product family has been very popular with customers, and we have had many requests for catalog versions with standard space screening,” says Mont Taylor, VP of business development for Teledyne e2v HiRel. “Our new 650V, 60A parts offer 100% screening off-the-shelf, and we can do full level 1 qualification with customer SCDs.”

The firm notes that GaN devices have revolutionized power conversion in other industries and are now available in radiation-tolerant, plastic-encapsulated packaging that has undergone stringent reliability and electrical testing to help ensure mission-critical success. The release of the new GaN HEMTs delivers the efficiency, size and power-density benefits required in critical aerospace and defense power applications, it adds.

Both new devices are available for ordering and immediate purchase from Teledyne e2v HiRel or an authorized distributor.

See related items:

Teledyne e2v HiRel adds high-power GaN HEMTs to 650V family

Tags: E-mode GaN FETs


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