AES Semigas


5 October 2022

SemiQ launches 1200V 40mΩ SiC MOSFET

SemiQ of Lake Forest, CA, USA – which designs, develops and manufactures SiC components and 150mm SiC epiwafers for high-frequency, high-temperature and high-efficiency power semiconductor devices – has expanded its portfolio of SiC power devices by launching its second-generation silicon carbide power switch, a 1200V 40mΩ SiC MOSFET. This complements the firm’s existing 80mΩ SiC MOSFETs and SiC rectifiers at 650V, 1200V and 1700V.

SemiQ says that it has engineered the MOSFET to provide the best trade-off of conduction and switching losses to benefit the widest possible range of applications.

SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles (EVs), power supplies and data centers and are specifically designed and tested to operate reliably in extreme environments. SemiQ says that, compared with legacy silicon insulated-gate bipolar transistors (IGBTs), its MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight and cooling requirements.

SemiQ’s new 1200V 40mΩ SiC MOSFET is available in TO-247-4L and TO-247-3L packages and will soon be available in multiple module packages. Samples are in stock at SemiQ and available through distributors DigiKey, Mouser and Richardson Electronics.

See related items:

SemiQ launches 1200V 80mΩ SiC power MOSFET modules in SOT-227 packages

SemiQ launches second-generation silicon carbide power switch

Tags: SiC power MOSFET


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