News: Microelectronics
5 September 2022
Toshiba launches third-generation SiC MOSFETs
Tokyo-based Toshiba Electronic Devices & Storage Corp (TDSC) - spun off from Toshiba Corp in 2017 - has launched the new TWxxNxxxC series of power devices, its third-generation silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), delivering low on-resistance and significantly reduced switching loss.
Specifically, on-resistance per unit area (R DS(ON)A) is reduced by about 43% by using a device structure with a built-in Schottky barrier diode developed for the second-generation MOSFETs, and also reduces feedback capacitance in the JFET region.
This allows a reduction of about 80% in the drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd) product (representing the relationship between conduction loss and switching loss). This cuts the switching loss by about 20%, and lowers both on-resistance and switching loss. The new products hence contribute to higher equipment efficiency, says Toshiba.
Ten products, five 1200V and five 650V products, are shipping now. Applications include: switching power supplies (servers, data centers, communications equipment etc); electric vehicle (EV) charging stations; photovoltaic inverters; and uninterruptible power supplies (UPS).
Toshiba says that it will continue to expand its lineup of power devices and to enhance its production facilities.
Toshiba launches 1200V and 1700V SiC MOSFET modules
