News: Microelectronics
29 August 2023
EPCSpace adds rad-hard GaN devices in high-current G-Package
EPC Space LLC of Haverhill, MA, USA has introduced two new radiation-hardened (rad-hard) gallium nitride (GaN) transistors with ultra-low on-resistance and high-current capability for high-power-density solutions that are said to be lower cost and more efficient than the nearest comparable rad-hard silicon MOSFET. The devices are supplied in hermetic packages in very small footprints.
The EPC7020G is a 200V, 14.5mΩ, 200Apulsed rad-hard GaN transistor and the EPC7030G is a 300V, 32mΩ, 200Apulsed rad-hard GaN transistor. They join the 40V, 4.5mΩ, 530Apulsed EPC7019G and the 100V, 4.5mΩ, 345Apulsed EPC7018G to cover applications including power supplies for satellites and space-mission equipment, motor drives for robotics, instrumentation and reaction wheels, and deep-space probes. This product family comes packaged in a compact hermetic package with a footprint less than 45mm2.
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies, resulting in higher power densities, higher efficiencies, and more compact and lighter-weight circuitry for critical space-borne missions, notes EPC.
“The G-Package family offers the lowest on-resistance of any packaged rad-hard transistor currently on the market,” claims CEO Bel Lazar. “These devices offer mission-critical components with superior figure of merit, significantly smaller size, and lower cost for the space and other high-reliability markets than alternative rad-hard silicon solutions,” he adds.
