19 July 2022
EPC Space expands rad-hard GaN transistor family for critical space-borne and other high-rel environments
EPC Space LLC of Haverhill, MA, USA has introduced two new radiation-hardened (rad-hard) gallium nitride (GaN) transistors with ultra-low on-resistance and extremely low gate charge for high-power-density solutions that are claimed to be lower cost and more efficient than the nearest comparable rad-hard silicon MOSFET. With drain-to-source voltages (VDS) of 100V and 200V respectively, the EPC7018G and EPC7007B are supplied in hermetic packages in very small footprints (of 8.0mm x 5.6mm and 5.7mm x 3.9mm, respectively). Chip-scale versions are available from Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA.
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter-weight circuitry for critical space-borne missions. The drain-to-source on-resistances (RDS(on)) of the EPC7018G and EPC7007B are 6mΩ and 28mΩ, respectively. The single-pulse drain current (IDM) is 345A and 80A, respectively.
Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.
“These two new additions to our rad-hard product line offer designers high-power, ultra-low on-resistance solutions enabling a generation of power conversion and motor drives in space operating at higher efficiencies, and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” says EPC Space’s CEO Bel Lazar.
For both the EPC7018G and EPC7007B, 500-unit pricing is $$212.80/ea for engineering models and $315.84/ea for space-level grade.