AES Semigas


8 March 2023

Lawrence Livermore chooses SemiQ’s silicon carbide diodes for particle accelerator project

SemiQ Inc of Lake Forest, CA, USA – which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-frequency, high-temperature and high-efficiency power semiconductor devices – says that Lawrence Livermore National Laboratory (LLNL) has chosen it to supply SiC diodes for an ongoing particle accelerator project.

SemiQ developed its top-side solderable 1200V 10A silicon carbide diode in a SMC (surface-mount component) package to withstand continuous high-current-pulse operation at 15 times rated current. The diodes are used as a snubber circuit and energy discharge circuit; with 60 devices in parallel on a single pulser board with high packing density.

The accelerator will enable x-ray images that can be used to certify the safety, security and effectiveness of modernized nuclear warheads without nuclear testing.

See related items:

SemiQ launches 1200V 40mΩ SiC MOSFET

SemiQ launches 650V, 1200V and 1700V SiC Schottky diode family

Tags: SiC power MOSFET