News: Microelectronics
8 March 2023
Lawrence Livermore chooses SemiQ’s silicon carbide diodes for particle accelerator project
SemiQ Inc of Lake Forest, CA, USA – which designs, develops and manufactures silicon carbide (SiC) power semiconductors and 150mm SiC epitaxial wafers for high-frequency, high-temperature and high-efficiency power semiconductor devices – says that Lawrence Livermore National Laboratory (LLNL) has chosen it to supply SiC diodes for an ongoing particle accelerator project.
SemiQ developed its top-side solderable 1200V 10A silicon carbide diode in a SMC (surface-mount component) package to withstand continuous high-current-pulse operation at 15 times rated current. The diodes are used as a snubber circuit and energy discharge circuit; with 60 devices in parallel on a single pulser board with high packing density.
The accelerator will enable x-ray images that can be used to certify the safety, security and effectiveness of modernized nuclear warheads without nuclear testing.
SemiQ launches 1200V 40mΩ SiC MOSFET
SemiQ launches 650V, 1200V and 1700V SiC Schottky diode family
