AES Semigas


9 May 2023

ROHM begins mass production of 650V GaN HEMTs

Japan-based power semiconductor maker ROHM Co Ltd has begun mass production of the 650V gallium nitride (GaN) high-electron-mobility transistors (HEMTs) GNP1070TC-Z and GNP1150TCA-Z, which are optimized for a wide range of power supply systems in industrial equipment and consumer devices, including servers and AC adapters.

The new products are jointly developed with Ancora Semiconductors Inc (an affiliate of global power and thermal management solutions provider Delta Electronics Inc), which was established in July 2022 to develop GaN devices and technology.

After initiating mass production of 150V GaN HEMTs (with a gate breakdown voltage of 8V) in 2022, in March ROHM established control IC technology for maximizing GaN performance. Now, ROHM has developed 650V GaN HEMTs with performance that contributes to higher efficiency and smaller size in a wider range of power supply systems.

The GNP1070TC-Z and GNP1150TCA-Z deliver what is claimed to be industry-leading performance in terms of the GaN HEMT figure of merit RDS(ON) x Ciss/R DS(ON) x Coss, translating to higher efficiency in power supply systems. At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability. GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturization of peripheral components.

Picture: Product lineup.

ROHM says that it continues to improve device performance through its new EcoGaN lineup of GaN devices, which contribute to energy conservation and miniaturization by maximizing GaN characteristics – to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.

See related items:

ROHM’s ultra-high-speed control IC technology maximizes performance of GaN switching devices

ROHM and Delta partner on developing and mass producing GaN devices

ROHM starts production of 150V GaN HEMTs with 8V gate-source voltage

Tags: GaN HEMT Rohm



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