News: Microelectronics
8 January 2024
Navitas participating at CES 2024
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA is participating in the Consumer Electronics Show (CES 2024) in Las Vegas (9-12 January), with meetings at Tech West/Venetian, #29-335.
Navitas’ GaNFast power ICs integrate GaN power, sensing, control and advanced safety features in a single device. Robust, high-voltage, high-efficiency GeneSiC SiC semiconductors are optimized for reliable operation in harsh-environment, high-power designs.
Navitas is exhibiting how next-generation GaN and SiC technology can improve the performance, efficiency and adoption of mobile fast charging, electric vehicle (EV), solar, energy storage, home appliance/industrial, and artificial intelligence (AI) data center power. The firm’s senior executives and technology experts are highlighting complete new system platform designs for EV, solar, data center, mobile and motor drive that feature new product technology platforms including GaNSafe, GeneSiC Gen-3 Fast, and Gen-4 GaNFast Half-Bridge.
Further end-user benefits are said to include increased portability, longer range, faster charging, and grid-independence, plus a focus on how low-carbon-footprint GaN and SiC technology can save over 6Gtons/year of CO2 by 2050.
“Since our first CES in 2018, Navitas has grown and diversified in technology, applications, markets and geographies, to match CES’ own growth and diversity in customer attendees,” says co-founder & CEO Gene Sheridan. “GaN and SiC accelerate us away from fossil fuels to ‘Electrify Our World’ with renewable sources and efficient uses of electricity. They’re disruptive, displacement technology upgrades from legacy silicon chips, enabling smaller, lighter, more-efficient, faster-charging and longer-range power solutions, with lower system costs.”
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Navitas showcasing GaN and SiC power semis at Bodo’s Wide Bandgap Event
