AES Semigas

IQE

8 July 2024

SiCrystal constructing new building to expand silicon carbide wafer production

ROHM Group subsidiary SiCrystal GmbH of Erlangen, Germany is creating an additional 6000m2 of space for the production of its monocrystalline silicon carbide (SiC) wafers by constructing a new building directly opposite its existing site in the north-east of Nuremberg. In cooperation with general contractor Systeambau from Hilpoltstein, construction is due to be completed by the beginning of 2026.

The proximity to the existing plant should ensure close integration of the production processes. SiCrystal’s total production capacity, including the existing building, will be about three times higher in 2027 than in 2024.

Groundbreaking ceremony for new the building. From left: Jürgen Voit and Daniel Polzin (Systeambau), Volker Petersik and Dr Robert Eckstein (SiCrystal), Dr Andrea Heilmaier (Economic Officer), Mayor Marcus König, Takashi Shimane and Dr Erwin Schmitt (SiCrystal), and Harald Lötsch (Systeambau).

Picture: Groundbreaking ceremony for new the building. From left: Jürgen Voit and Daniel Polzin (Systeambau), Volker Petersik and Dr Robert Eckstein (SiCrystal), Dr Andrea Heilmaier (Economic Officer), Mayor Marcus König, Takashi Shimane and Dr Erwin Schmitt (SiCrystal), and Harald Lötsch (Systeambau).

“This groundbreaking ceremony marks an important milestone for SiCrystal and underlines our commitment to the metropolitan region,” says chief operating oficer Dr Erwin Schmitt. “With the additional production capacities, we will strengthen our market position,” he adds.

“SiCrystal is one of the world’s leading manufacturers of silicon carbide semiconductor substrates - among other things, these products are needed for the energy transition,” commented Nuremberg’s mayor Marcus König at the groundbreaking ceremony. “SiCrystal is committing itself to Nuremberg as a location with this massive investment and is thus not only retaining jobs but also creating new ones.”

See related items:

ROHM’s SiCrystal and ST expand silicon carbide wafer supply agreement

ROHM highlights new power semiconductor developments and SiC capacity investment

Tags: Rohm SiC substrates

Visit: www.sicrystal.de

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