News: Microelectronics
6 November 2024
Cambridge GaN Devices exhibiting at electronica
Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — is exhibiting in booth C3.539 at electronica 2024 in Messe München, Munich, Germany (12–15 November).
This is the second time that the firm has exhibited at the event. “Since our first appearance at electronica, CGD has made remarkable steps,” says chief marketing officer Andrea Bricconi. “We have introduced our P2 series ICeGaN ICs that feature RDS(on) levels down to 25mΩ, supporting multi kW power levels with the highest efficiency. We have announced a deal with TSMC, the leading IC fabrication house in the world, which ensures quality and supply of our innovative power devices. Also, studies by leading academic research establishment Virginia Tech University have demonstrated that our ICeGaN GaN technology is more reliable and robust than other GaN platforms,” he adds. “GaN is now available for use at higher power levels, and at electronica we are expecting to meet with designers who are eager to take advantage of the efficiency and power density benefits that GaN can bring to their latest designs.”
On 12 November during the show, CGD is giving two presentations:
- ‘SiC & GaN Technologies - Exploring Advancements, Addressing Challenges’ (13:20–14:10, booth A5.351): chief technology officer & co-founder professor Florin Udrea joins a panel of GaN experts for a panel discussion moderated by Power Electronics News’ editor-in-chief Maurizio Di Paolo Emilio.
- ‘ICeGaN as a smart high voltage platform for high power industrial and automotive applications’ (16:10–16:35, Power Electronics Forum): presented by Professor Florin Udrea.
CGD notes that the power devices field has undergone significant change due to the emergence of wide-bandgap semiconductors, particularly gallium nitride (GaN) and silicon carbide (SiC). Traditionally, GaN has been used for lower-power-consumer applications (e.g. power supplies), while SiC dominated the medium- to high-power markets, such as industrial (e.g. motor drives) and automotive applications (e.g. traction inverters). SiC's superior scaling of on-state resistance at high voltages gives it an edge above 1.2kV, but GaN is now competing with SiC at 650V for all power levels, the firm adds. Featuring sensing and protection functions, ICeGaN surpasses discrete SiC in terms of robustness and ease of paralleling, offering notable advantages for 650V high-power applications. Additionally, with the rise of multi-level topologies for traction inverters, GaN may challenge SiC’s 1.2kV market. Ultimately, both technologies have a bright future, with overlap expected in high-power (10–500 kW) applications.
At electronica, CGD is showing a number of demos that employ ICeGaN, including:
- 3kW totem-pole PFC evaluation board;
- high- and low-power Qorvo motor drive evaluation kits developed in collaboration with CGD and utilizing ICeGaN;
- half-bridge and full-bridge evaluation boards, plus an ICeGaN in parallel evaluation board;
- single leg of a 3-phase 800V automotive inverter demo board, developed in partnership with French public R&I institute IFP Energies nouvelles (IFPEN);
- ICeGaN versus discrete GaN circuits comparison in half bridge (daughter cards) demo board.
- high-density USB-PD adaptor developed with Taiwan’s Industrial Technology Research Institute (ITRI).
Cambridge GaN Devices showcasing ICeGaN at ECCE 2024
CGD launches P2 series of ICeGaN power ICs
