News: Microelectronics
17 October 2024
Cambridge GaN Devices showcasing ICeGaN at ECCE 2024
Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — is exhibiting in booth 319 at the IEEE Energy Conversion Congress & Expo (ECCE 2024) in the Phoenix Convention Center, Phoenix, AZ, USA (21-22 October). ECCE is now in its 16th year and sponsored by both the IEEE Industrial Application Society (IAS) and IEEE Power Electronics Society (PELS).
“It is important for CGD that we spread our message that GaN is the future of power electronics, in terms of energy efficiency, power density and smallest carbon footprint, and that our ICeGaN GaN power ICs are the most rugged and easiest-to-use devices available,” says chief commercial officer Andrea Bricconi.
At the event, CGD is showcasing demos that employ ICeGaN, including:
- a 3kW PFC reference design;
- a Qorvo motor drive evaluation kit developed in partnership with CGD and utilizing ICeGaN;
- a slim 100W adaptor;
- a half-bridge, full-bridge as well as ICeGaN in parallel evaluation boards;
- a 300W PFC+LLC;
- a single leg of a 3-phase automotive inverter demo board, developed in partnership with the French public R&I institute IFP Energies nouvelles (IFPEN);
- ICeGaN versus discrete GaN circuits comparison in half bridge (daughter cards) demo board.
CGD launches P2 series of ICeGaN power ICs
CGD demos new ICeGaN 650V GaN ICs at PCIM Europe
