News: Microelectronics
4 April 2025
Navitas’ GaNSense ICs used in Great Wall’s 2.5kW DC–DC converter for 400V power architecture
Gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA says that its GaNSense power ICs will power the latest 2.5kW ultra-high power density DC–DC converter for AI data centers of China-based Greatwall Power Technology Co Ltd.
The rapid development of AI has imposed higher requirements for computing power on data centers. To accommodate more GPUs for computing, the architecture of 400V independent cabinets will become a new development trend, says Navitas. Module power supplies with small size, high efficiency and greater independence will free up valuable cabinet space, directly enhance computing power, reduce energy consumption, and contribute to achieving dual-carbon goals, it adds.
Great Wall has developed a 2.5kW DC–DC converter in 1/4 brick outline with what is claimed to be the world’s highest power density of 92.36W/cm3, up to eight times higher than the output power of traditional silicon designs. With a record half-load efficiency of 97.9% and a wide input range of 320–420VDC, the solution achieves the increasingly stringent efficiency guidelines and regulations from Open Compute Project (OCP) and can be widely used in applications from AI data centers, telecoms, and industrial equipment.
The ultra-high power density DC–DC converter is powered by Navitas’ GaNSense NV6169. The 650V, 45mΩ, delivers 50% more power than prior designs, in an industry-standard, low-profile, low-inductance, 8mm x 8mm PQFN package for high-efficiency, high-density power systems. GaNFast power ICs with GaNSense technology feature GaN-industry-first features such as loss-less current sensing and what is claimed to be the world’s fastest short-circuit protection, with a ‘detect-to-protect’ speed of only 30ns, 6x faster than discrete solutions.
Unlike competing solutions, NV6169 is rated at 650V for nominal operation plus an 800V peak-rating for robust operation during transient events. As a truly integrated power IC, the GaN gate is fully protected and the whole device is rated at an industry-leading electrostatic discharge (ESD) specification of 2kV.
“With its faster switching frequency and higher efficiency, GaN has become a key factor in unlocking the next generation of power supplies. We are very pleased to collaborate with Navitas, an industry leader in GaN technology, and successfully enable this industry-leading ultra-high-power density and ultra-high efficiency DC–DC converter,” comments Michael Zhang, head of DC product line at Greatwall Power. “We look forward to deepening our collaboration with Navitas to unlock the application of GaN in more fields, continuously improve power supply efficiency to reduce energy consumption, and accelerate the low-carbon transformation of various industries,” he adds.
“The profound heritage and innovative strength of Great Wall Power in the power supply field have enabled our GaNFast power ICs to fully demonstrate their advantages,’ comments Charles Zha, senior VP & general manager of Navitas Asia-Pacific. “Navitas firmly believes that continuous cooperation with Great Wall will make GaN technology shine in multiple fields such as AI data centers and telecommunications and promote the industry to develop towards a more efficient and environmentally friendly direction.”
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