News: Microelectronics
23 April 2025
Navitas showcasing advances in GaN and SiC technologies at PCIM, including first production-released 650V bi-directional GaNFast ICs
In booth #544 (Hall 9) at the Power Electronics, Intelligent Motion, Renewable Energy and Energy Management (PCIM 2025) Expo & Conference in Nuremberg, Germany (6–8 May), gallium nitride (GaN) power IC and silicon carbide (SiC) technology firm Navitas Semiconductor Corp of Torrance, CA, USA is exhibiting several GaN and SiC breakthroughs in AI data centers, electric vehicles (EVs), motor drives, and industrial applications.
The technology and system breakthroughs include the following:
- The first production-released 650V bi-directional GaNFast ICs and IsoFast, high-speed isolated gate drivers. This is said to create a paradigm shift in power by enabling the transition from two-stage to single-stage topologies. Targeted applications range widely across EV charging (on-board chargers (OBC) and roadside), solar inverters, energy storage, and motor drives.
- Automotive-qualification high-power GaNSafe ICs, which have been qualified to both Q100 and Q101, unlocking unprecedented power density and efficiency for on-board chargers (OBCs) and HV-LV DC-DC converters applications. A reliability report has been created that analyzes over seven years of production and field data and demonstrates GaN’s technology track record, alongside generational and family improvements in robustness and reliability, establishing GaN power ICs as highly reliable and automotive-ready.
- The latest release of the SiCPAK power modules, which utilize advanced epoxy-resin potting technology and GeneSiC trench-assisted planar technology, to enable 5x lower thermal resistance shift for extended system lifetime. Rigorously designed and validated for the most demanding high-power environments, they prioritize reliability and high-temperature performance. Target markets include EV DC fast chargers (DCFC), industrial motor drives, interruptible power supplies (UPS), solar inverters and power optimizers, energy storage systems (ESS), industrial welding, and induction heating.
- Newly released GaNSense Motor Drive ICs with bi-directional loss-less current sensing, voltage sensing, and temperature protection, further enhance performance and robustness beyond what is achievable by any discrete GaN or discrete silicon devices.
- Automotive-qualified (AEC-Q101) Gen-3 Fast SiC MOSFETs with ‘trench-assisted planar’ technology: Enabled by over 20 years of SiC innovation, proprietary GeneSiC technology provides what is claimed to be world-leading performance over temperature, delivering cool running, fast switching and superior robustness to support faster-charging EVs and up to 3x more powerful AI data centers.
- GaNSlim: A new generation of highly integrated GaN power ICs that can further simplify and speed up the development of small-form-factor, high-power-density applications by offering the highest level of integration and thermal performance. Target applications include chargers for mobile devices and laptops, TV power supplies, and lighting systems of up to 500W.
- World’s first 8.5kW AI data-center power supply: Featuring high-power GaNSafe power ICs and Gen-3 Fast SiC MOSFETs in 3-phase interleaved CCM totem-pole PFC and 3-phase LLC topologies, the world’s first 8.5kW OCP power solution provides the highest efficiency, performance and lowest component count, and achieves 98% efficiency for AI and hyperscale data centers.
- World’s highest-power-density AI power supply: Navitas delivers efficient 4.5kW power in the smallest power supply form factor for the latest AI GPUs that demand 3x more power per rack. The optimized design uses high-power GaNSafe ICs and Gen-3 Fast SiC MOSFETs enabling what is claimed to be the world’s highest power density with 137W/in3 and over 97% efficiency.
- ‘IntelliWeave’ patented digital control optimized for AI data-center power supplies: Combined with high-power GaNSafe and Gen-3 Fast SiC MOSFETs to enable PFC peak efficiencies of 99.3% and reduce power losses by 30% compared with existing solutions.
Navitas gains automotive qualification of high-power GaNSafe ICs
Navitas production-releases first 650V bi-directional GaNFast ICs and isolated gate-drivers
Navitas presents first 8.5kW AI data-center power supply powered by GaN and SiC
Navitas introduces IntelliWeave digital control technique for AI data centers
