News: Suppliers
5 November 2025
Veeco receives Propel300 MOCVD system order from GaN-on-Si power semiconductor IDM
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has received an order for a Propel300 metal-organic chemical vapor deposition (MOCVD) system from a “major power semiconductor integrated device manufacturer” (IDM) for gallium nitride (GaN) epitaxy on 300mm silicon (Si) wafers.
“Qualifying Propel300 for 300mm GaN-on-Si epitaxy for power devices is a significant achievement in the path to widespread adoption of GaN technology,” reckons Anil Vijayendran, vice president, MOCVD product line management. “Moving from 200mm to 300mm enables customers to achieve 2.3 times more chips per wafer, while allowing them to use existing 300mm production lines, and ultimately lower their device costs.”
GaN’s high efficiency and superior thermal and switching properties, which can significantly reduce device and overall system size and weight, are accelerating its adoption in power semiconductor manufacturing, notes Veeco. The GaN device market will grow at a compound annual growth rate (CAGR) of 35% from $555m in 2025 to $2.5bn in 2030, forecasts market analyst firm Yole Group. Key to this will be the increased adoption of GaN technology in automotive, industrial and data-center applications, where the continuously rising power consumption requirements of AI workloads are fueling demand for more efficient power supplies.
Featuring Veeco’s proven MOCVD TurboDisc technology, Propel300 combines what is claimed to be exceptional performance with fully automated wafer handling to provide not only best-in-class thickness and doping uniformity but also low defectivity and high productivity. These benefits, together with its ease of use and long campaigns that do not require in-situ cleaning, contribute to Propel300’s low cost of ownership per wafer.
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