AES Semigas


18 March 2020

GTAT and ON Semiconductor sign five-year, $50m deal for production and supply of SiC material

GT Advanced Technologies (GTAT) of Hudson, NH, USA - which produces silicon carbide (SiC) and sapphire material and crystal growth equipment for the solar, power electronics and optoelectronics industries) - has signed a five-year agreement, valued at a potential of $50m, to produce and supply its CrystX silicon carbide (SiC) material to power semiconductor IC supplier ON Semiconductor of Phoenix, AZ, USA, for use in high-growth markets and applications.

“Our agreement today helps address the very steep trajectory for SiC as the preferred semiconductor substrate material for power electronics applications,” says GTAT’s president &CEO Greg Knight.

“Combining ON Semiconductor’s 40 years of experience in high-volume wafer production with GTAT’s expertise and rapid advancement in SiC crystal growth will create a robust and scalable supply chain for the dynamic high-power wide-bandgap market,” says Brent Wilson, senior VP of global supply chain at ON Semiconductor.

High-growth applications such as electric vehicle (EV) traction systems, hybrid and plug-in EVs, solar and energy storage, and EV charging all require and depend on a robust supply of high-quality and cost-competitive SiC material. ON Semiconductor will use GTAT’s proprietary 150mm SiC crystal to make its SiC wafers, to further accelerate its role as a vertically integrated supplier within the SiC supply chain and to maintain its supply.

See related items:

GTAT achieves ISO-9001:2015 Certification

GTAT and GlobalWafers sign multi-year deal to develop source of SiC wafer supply

GTAT introduces 150mm bulk SiC crystal material

GTAT opens new silicon carbide manufacturing plant, corporate HQ and R&D center

GTAT launches SiC boule growth furnace addressing emerging demand for 6” wafers

Tags: GT SiC




Book This Space