AES Semigas


18 February 2021

ON Semi launches 650V SiC MOSFETs

Power semiconductor IC supplier ON Semiconductor of Phoenix, AZ, USA has launched a range of 650V silicon carbide (SiC) MOSFET devices for demanding applications where power density, efficiency and reliability are key considerations. By replacing existing silicon switching technologies with the new SiC devices, designers can achieve significantly better performance in applications such as electric vehicles (EV) on-board chargers (OBC), solar inverters, server power supply units (PSU), telecoms and uninterruptible power supplies (UPS), notes the firm.

Since they are based on silicon carbide, the new automotive AECQ101- and industrial-grade-qualified 650V SiC MOSFETs provide superior switching performance and improved thermals compared with silicon, resulting in improved efficiency at the system level, enhanced power density, reduced electromagnetic interference (EMI) and reduced system size and weight.

The new generation of SiC MOSFETs employs a novel active cell design combined with advanced thin wafer technology enabling what is claimed to be best-in-class figure of merit Rsp (Rdson*area) for 650V breakdown voltage. The NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC1 have what is reckoned to be the lowest on-resistance Rdson (12mΩ) in the market in D2PAK7L and To247 packages. This technology is also optimized around energy loss figure of merits, optimizing performance in automotive and industrial applications. An internal gate resistor (Rg) allows more flexibility to designers, eliminating the need to slow down devices artificially with external gate resistors. Higher surge, avalanche capability and short-circuit robustness all contribute to enhanced ruggedness that delivers higher reliability and longer device lifetimes, says the firm.

“In modern power applications such as on-board chargers for EV and other applications including renewable energy, enterprise computing and telecoms, efficiency, reliability and power density are constant challenges for designers,” says Asif Jakwani, senior VP of the Advanced Power Division. “These new SiC MOSFETs significantly improve performance over the equivalent silicon switching technologies, allowing engineers to meet these challenging design goals,” he adds. “The enhanced performance delivers lower losses that enhance efficiency and reduce thermal management needs as well as reducing EMI. The end result of using these new SiC MOSFETs is a smaller, lighter, more efficient and more reliable power solution.”

The new devices are all surface-mount and available in industry-standard package types including TO247 and D2PAK.

See related items:

ON Semiconductor launches 900V and 1200V SiC MOSFETs for demanding applications

ON Semiconductor launches industrial- and automotive-qualified SiC MOSFETs

Tags: SiC power MOSFET