News: Microelectronics
29 April 2021
Infineon upgrades EasyDUAL CoolSiC MOSFET power modules
Infineon Technologies AG of Munich, Germany has upgraded its EasyDUAL CoolSiC MOSFET modules with a new aluminium nitride (AlN) ceramic. The devices come in half-bridge configuration with an on-state resistance (RDS(on)) of 11mΩ in an EasyDUAL 1B package and 6mΩ in an EasyDUAL 2B package.
With high-performance ceramic, the 1200V devices are suitable for high-power-density applications including solar systems, uninterruptible power supplies (UPS), auxiliary inverters, energy storage systems and electric vehicle (EV) chargers.
Picture: Infineon’s new EasyDUAL CoolSiC MOSFET 1200V modules feature an AlN ceramic reducing the thermal resistance to the heat sink (RthJH) by up to 40%.
Available now, the EasyDUAL CoolSiC MOSFET modules FF11MR12W1M1_B70 and FF6MR12W2M1_B70 are equipped with the latest CoolSiC MOSFET technology that features superior gate-oxide reliability. With the improved thermal conductivity of the DCB (direct copper bonded) material, the thermal resistance to the heat sink (RthJH) can be lowered by up to 40%. Combined with the CoolSiC Easy modules, the new AlN ceramic enables an increase in the output power or a reduction in the junction temperatures. This can lead to an improved lifespan of the system.
The EasyDUAL is being showcased at Infineon’s Virtual Power Conference (available live, 4-6 May), which complements the PCIM Europe (Power Conversion and Intelligent Motion) Digital Days event.
Infineon launches EasyPACK CoolSiC MOSFET module supporting 1500V DC-link solar applications
Infineon adds 62mm package to CoolSiC MOSFET 1200V module family
