AES Semigas


5 April 2022

SemiQ launches 1200V 80mΩ SiC power MOSFET modules in SOT-227 packages

SemiQ of Lake Forest, CA, USA – which designs, develops and manufactures SiC components and 150mm SiC epiwafers for high-frequency, high-temperature and high-efficiency power semiconductor devices – has released its second-generation silicon carbide 1200V 80mΩ power MOSFET modules developed in industry-standard SOT-227 packages, namely the GCMS080B120S1-E1 with 1200V 10A parallel diode and the GCMX080B120S1-E1 without parallel diode. The 1200V silicon carbide MOSFET modules are the latest extension to the firm’s SiC MOSFET product portfolio.

SemiQ’s SiC MOSFETs bring high efficiency to high-performance applications including electric vehicles (EVs), power supplies and data centers, and are specifically designed and tested to operate reliably in extreme environments. The firm says that, compared with legacy silicon insulated-gate bipolar transistors (IGBTs), its MOSFETs switch faster with lower losses, enabling system-level benefits through reduced size, weight and cooling requirements.

“The SOT-227 package is one of the best fully isolated power semiconductors packages around,” says president & general manager Michael Robinson. “Combined with our SiC MOSFETs and SiC diodes, these products are perfect for increasing efficiency in your fast charging and inverters systems,” he adds.

Samples are in stock at SemiQ and available through distributors DigiKey, Mouser and Richardson Electronics. Also, 40mΩ and 20mΩ modules in the SOT-227 are on the way.

See related items:

SemiQ launches second-generation silicon carbide power switch

SemiQ launches 650V, 1200V and 1700V SiC Schottky diode family

Tags: SiC power MOSFET