AES Semigas


27 January 2022

Toshiba launches 1200V and 1700V SiC MOSFET modules

Tokyo-based Toshiba Electronic Devices & Storage Corp (TDSC) - spun off from Toshiba Corp in 2017 - has launched two silicon carbide (SiC) MOSFET dual modules: MG600Q2YMS3 with a voltage rating of 1200V and drain current rating of 600A, and MG400V2YMS3 with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings, they join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.

The new modules (in a 2-153A1A package) have mounting compatibility with widely used silicon insulated-gate bipolar transistor (IGBT) modules. Their low-energy-loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems, says the firm.

Applications include: inverters and converters for railway vehicles; renewable energy power generation systems; motor control equipment; and high-frequency DC-DC converter.

See related items:

Toshiba launches 3300V, 800A SiC MOSFET module for industrial applications

Toshiba shipping 1200V SiC MOSFET

Tags: Toshiba SiC power MOSFET


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