30 June 2022
EPC adds fifth eGaN FET to rad-hard family, offering 7mΩ, 100V, 160A
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has launched the EPC7004, a 100V, 7mΩ, 160APulsed, radiation-hardened enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistor (FET) in a small 6.56mm2 footprint. The EPC7004 has a total dose radiation rating greater than 1Mrad and (single-event effect) immunity for LET (linear energy transfer) of 85MeV/(mg/cm2). Along with the rest of the rad-hard family (EPC7014, EPC7007, EPC7019, EPC7018), the EPC7004 is offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space LLC of Haverhill, MA, USA.
With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity and very low on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter-weight circuitry for critical space-borne missions, says EPC. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions, it adds.
The EPC7004 joins a family of rad-hard products ranging from 40V to 200V that offer significant electrical and radiation performance benefits for applications including DC-DC power, motor drives, light detection & ranging (LiDAR), deep probes, and ion thrusters for space applications, satellites and avionics.
“The 100V EPC7018 and EPC7004 offer designers different size/power trade-offs with ultra-low on-resistance enabling a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before,” says CEO & co-founder Alex Lidow.
The EPC7004 is available for engineering sampling and will be fully qualified for volume shipments in December.