AES Semigas


5 May 2022

onsemi showcasing energy-efficient solutions at PCIM

In booth 330 (Hall 9) at Power, Control and Intelligent Motion (PCIM) Europe 2022 in Nürnberg Messe, Nuremberg, Germany (10-12 May), power semiconductor IC supplier onsemi of Phoenix, AZ, USA is introducing a range of new power solutions.

Onsemi is giving live demonstrations of its latest technologies, showing how they enable the development of solutions for applications including e-mobility, energy storage, and smart power. Included among the demos are a Student Formula car developed in conjunction with Technical University Munich, and an e-scooter. Also on show is an electric vehicle (EV) charger from Kempower that incorporates onsemi silicon carbide (SiC) diodes and a warehouse robot with ecoSpin.

onsemi is launching a new power bundle for USB-C PD (power delivery) charging above 100W, featuring the NCP1623, NCP1345 and NCP4307 – all part of the critical conduction mode PFC, high-frequency quasi-resonant (QR) and synchronous rectifier controller family. The USB-C offering will be further expanded by the announcement of new USB-C controllers.

onsemi is also introducing multiple new SiC power switching devices, all of which offer enhanced performance over previous generations. The first TOLL-packaged 650V 33mΩ SiC MOSFET, NTBL045N065SC1, is launched with less footprint, less space and lower package inductance than D2PAK 7-lead. This provides Kelvin source configuration to improve switching loss and gate noise and guarantees MSL1 (Moisture Sensitivity Level 1). SiC devices offer significant advantages over their silicon predecessors, including enhanced efficiency at high frequencies, lower EMI, higher-temperature operation and greater reliability. onsemi claims to be the only supplier of SiC solutions with vertical integration capability including SiC boule growth, substrate, epitaxy, device fabrication, integrated modules and discrete package solutions.

Lastly, onsemi is also presenting the seventh-generation insulated-gate bipolar transistor (IGBT) and diode for the first time. The latest 1200V FS7 IGBT has reduced forward-bias voltage by 20% compared with the previous generation, greatly improving the efficiency and power density in motor control application. The firm is also launching fast version FS7 IGBT for medium-high switching frequency applications in solar, UPS and energy storage, in which the switching loss is 50% improved. The FS7 portfolio is further extended with 750V and 1200V VE-Trac Direct automotive-qualified solutions, with what is claimed to be excellent ruggedness, soft switching and high efficiency to meet EV traction needs.

onsemi staff are presenting a number of topics at PCIM, covering SiC technology within the poster sessions, power electronics at the industry forum, the e-mobility forum, and the exhibitor forum.

See related items:

ON Semiconductor launches 1200V full-SiC MOSFET modules for EV charging

ON Semi launches 650V SiC MOSFETs

Tags: SiC power MOSFET



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