8 June 2021
ON Semiconductor launches 1200V full-SiC MOSFET modules for EV charging
Power semiconductor IC supplier ON Semiconductor of Phoenix, AZ, USA has announced a pair of 1200V full silicon carbide (SiC) MOSFET 2-pack modules, enhancing its range of products suitable for the electric vehicle (EV) market.
As sales of EVs continue to grow, infrastructure must be rolled out to meet the needs of drivers, providing a network of rapid charging stations that will allow them to complete their journeys quickly and without ‘range anxiety’. Requirements in this sector are rapidly evolving, requiring power levels in excess of 350kW and efficiencies of 95% becoming the norm. Given the diverse environments and locations in which these chargers are deployed, compactness, robustness and enhanced reliability are all challenges that designers face.
ON Semiconductor says that its new 1200V M1 full-SiC MOSFET 2-pack modules, based on planar technology and suited to a drive voltage in the range 18-20V, are simple to drive with negative gate voltages. The larger die reduces thermal resistance compared with trench MOSFETs, reducing die temperature at the same operating temperature.
Configured as a 2-pack half-bridge, the NXH010P120MNF1 is a 10mΩ device housed in an F1 package while the NXH006P120MNF2 is a 6mΩ device in an F2 package. The packages feature press-fit pins, making them suitable for industrial applications, and an embedded negative temperature coefficient (NTC) thermistor facilitates temperature monitoring.
As part of the ON Semiconductor EV charging ecosystem, the new SiC MOSFET modules have been designed to work alongside driver solutions such as the NCD5700x devices. The recently introduced NCD57252 dual-channel isolated IGBT/MOSFET gate driver offers 5kV of galvanic isolation and can be configured for dual low-side, dual high-side or half-bridge operation.
The NCD57252 is housed in a small SOIC-16 wide body package and accepts logic level inputs (3.3V, 5V and 15V). The high-current device (source 4.0A/sink 6.0A at Miller plateau voltage) is suitable for high-speed operation, as typical propagation delays are 60ns.
Complementing the new modules and gate driver are the ON Semiconductor SiC MOSFETs that, it is claimed, provide superior switching performance and enhanced thermals compared with similar silicon devices. This results in improved efficiency, greater power density, improved electromagnetic interference (EMI) and reduced system size and weight, the firm adds.
The recently announced 650V SiC MOSFETs (launched in February) employ a novel active cell design combined with advanced thin wafer technology enabling a best-in-class figure of merit (FoM) for (RDS(on)*area). Devices in the series such as the NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC offer what is claimed to be the lowest RDS(on) on the market for D2PAK7L/TO247 packaged MOSFETs.
Also, the firm’s 1200V and 900V N-channel SiC MOSFETs feature a small chip size that reduces device capacitance and gate charge (Qg – as low as 220nC), reducing switching losses when operating at the high frequencies demanded by EV chargers.
During the Applied Power Electronics Conference (APEC 2021) Virtual Conference + Exposition being held online on 14-17 June, APEC, ON Semiconductor is showcasing SiC solution for industrial applications as well as presenting exhibitor seminars about its solutions for off-board EV charging.