10 April 2023
EPC adds 30mΩ 100V and 11mΩ 200V devices to rad-hard GaN family
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA – which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) and integrated circuits for power management applications – has introduced two new radiation-hardened GaN FETs (available for engineering sampling now): the 200V, 11mΩ, 170APulsed EPC7020 in a small 12mm2 footprint, and the 100V, 30mΩ, 42APulsed EPC7003 in a tiny 1.87mm2 footprint.
Both devices have a total dose radiation rating greater than 1000K Rad(Si) and SEE (single event effect) immunity for LET (linear energy transfer) of 83.7MeV/mg/cm2 with VDS up to 100% of rated breakdown. The new devices, along with the rest of the rad-hard family (EPC7019, EPC7014, EPC7004, EPC7018, EPC7007) are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space LLC of Haverhill, MA, USA.
eGaN FETs and ICs are said to be smaller, operate 40 times better electrically, and are lower cost than the rad-hard silicon devices typically used in high-reliability and space applications. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions.
Applications benefiting from the performance and fast deployment of these devices include DC–DC power converters, motor drives, light detection & ranging (LiDAR), deep probes, and ion thrusters for space applications, satellites including those for LEO and GEO orbits, and avionics.
“The rad-hard product family ranges from 40V to 200V and from 4A to 530A, covering a wide range of applications in harsh environments such as space including interplanetary scientific missions, high-altitude flight, and other high-reliability military applications,” says CEO & co-founder Alex Lidow.
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