AES Semigas

IQE

6 June 2024

CGD partner with Qorvo to develop reference design and evaluation kit showcasing GaN for motor control applications

Fabless firm Cambridge GaN Devices Ltd (CGD) — which was spun out of the University of Cambridge in 2016 to design, develop and commercialize power transistors and ICs that use GaN-on-silicon substrates — is partnering with Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) to develop a reference design and evaluation kit (EVK) that showcases GaN for motor control applications. CGD aims to speed the use of GaN power ICs in BLDC (brushless DC) and PMSM (permanent-magnet synchronous motor) applications, resulting in higher-power, highly efficient, compact and reliable systems. Qorvo is building an EVK for its PAC5556A motor/control IC that is powered by CGD’s ICeGaN (IC-enhanced GaN) technology.

“Because ICeGaN – unlike other GaN implementations from other companies – integrates the interface circuitry but not the controller together with the GaN HEMT, it is simple to combine with highly integrated motor controller and drive ICs such as Qorvo’s PAC5556A 600V high-performance BLDC/PMSM motor controller and driver,” says CEO Dr Giorgia Longobardi. “We are delighted to partner with Qorvo to enable motor controller and driver applications to enjoy the benefits of GaN power,” she adds.

“Wide-bandgap semiconductors such as GaN [gallium nitride] and SiC [silicon carbide] are being actively considered in various motor control applications for the power density and efficiency benefits they bring,” notes Jeff Strang, general manager of Qorvo’s Power Management business unit. “CGD’s ICeGaN technology offers ease of use and reliability, two crucial factors for motor control and drive designers.”

GaN’s benefits primarily include lower losses, which results in higher efficiency, leading to increased power availability and less heat. This reduces the need for complex, bulky and costly thermal management solutions, resulting in smaller, more powerful systems that have a longer life. GaN also delivers higher torque at low speeds and, therefore, more accurate control. Also, GaN allows high-speed switching, which can reduce audible noise, which is especially valued for domestic items such as ceiling fans, heat pumps, and refrigerators.

In addition to being easy to use, ICeGaN is said to offer other benefits over other GaN devices. The gate drive voltage of ICeGaN is compatible with IGBTs. Because ICeGaN integrates the Miller clamp within the GaN IC, a negative turn-off voltage is not required, and low-cost current drivers can be used. Finally, ICeGaN includes a useful current sense function, simplifying circuit design and reducing the bill of materials (BOM).

The reference design is available now, and the EVK RD5556GaN will be available for purchase in third-quarter 2024. It is also being shown in CGD’s booth 643 (Hall 7) at the Power, Control and Intelligent Motion (PCIM) Europe 2024 exhibition in Nuremberg, Germany (11–13 June. Qorvo is also exhibiting at PCIM, in booth 406 (Hall 7).

See related items:

CGD demos new ICeGaN 650V GaN ICs at PCIM Europe

CGD adds new ICeGaN power IC packages with enhanced thermal performance

Tags: GaN power devices

Visit: www.mesago.de/en/PCIM/

Visit: www.camgandevices.com

Visit: www.qorvo.com

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