9 October 2024
ETRI develops p-type selenium-tellurium alloy transistor
South Korea’s Electronics and Telecommunications Research Institute shows how it is possible to overcome the low mobility of p-type semiconductors while improving display refresh rates and power consumption.
9 October 2024
Magnesium intercalation in gallium nitride
Superlattices of 2D monolayers show record high strain, enhancing hole transport.
9 October 2024
TMAl reflow GaN-on-silicon for fully vertical electronics
Avoiding intentional AlN buffer growth enables high current flow through GaN/Si interface.
9 October 2024
Zinc oxide homojunction LEDs
Nanoparticles provide hole injection into a pn-junction.
9 October 2024
Strain-engineering for green LEDs on silicon
Using single AlN buffer increased internal quantum efficiency from 33% to 78%.
9 October 2024
Red/yellow InGaN micro-LED photodetectors for visual light communications
Researchers demonstrate high-data-rate reception from white LED transmitters.
2 September 2024
Near size-independent UV-A micro-LED performance
Researchers claim record for on-wafer EQE from sub-10μm device.
2 September 2024
Comparison between MBE and MOCVD technologies
Richard Hogg, III-V Epi chief technology officer and professor of Photonics at Aston Institute of Photonics Technology (AIPT), and Dr Neil Gerrard, III-V Epi director of epitaxy, explore the III-V semiconductor synthesis applications that each epitaxial growth technology best suits.
